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Samsung Electronics has initiated mass production of its one-terabit quad-level cell (QLC) 9th-generation vertical NAND (V-NAND), marking a significant advancement in memory technology. This production follows the earlier launch of the triple-level cell (TLC) 9th-generation V-NAND, reinforcing Samsung's dominance in the high-capacity NAND flash market. The new QLC V-NAND is designed to meet the growing demands of AI applications, providing a comprehensive lineup of advanced SSD solutions.
The QLC 9th-generation V-NAND incorporates innovative technologies such as Channel Hole Etching and Designed Mold, which enhance performance and reliability. With improvements in data retention and power consumption, this technology is set to double write performance and significantly boost data input/output speeds. Samsung's commitment to expanding the applications of this technology across various platforms, including consumer products and cloud services, highlights its strategic focus on the AI era.
• Samsung's QLC V-NAND addresses the growing demand for AI applications.
• Innovative technologies enhance performance and reliability of new memory solutions.
This technology allows for higher data density and capacity, making it suitable for applications requiring large storage solutions.
TLC is commonly used in consumer SSDs due to its balance of performance and cost-effectiveness.
This technique is crucial for achieving the highest layer count in V-NAND technology.
Samsung's innovations in NAND flash memory, particularly for AI applications, position it at the forefront of the tech industry.
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